发明名称 |
Method for manufacturing field effect transistor |
摘要 |
A field oxide film for element isolation is formed on an SOI substrate having a silicon layer formed on an insulating layer, an active nitride film is wet-etched to reduce its film thickness to a value small enough to allow the edge of the silicon layer to become exposed and ions of a channel stopping impurity are implanted only into the edge of the silicon layer through self-alignment either vertically or at an angle by using the active nitride film as a mask. Through this manufacturing method, a field effect transistor which achieves a small gate length, is free from the adverse effect of a parasitic transistor and thus does not readily manifest a hump, and allows a reduction in the distance between an nMOS and a pMOS provided next to each other is realized.
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申请公布号 |
US6833589(B2) |
申请公布日期 |
2004.12.21 |
申请号 |
US20020075588 |
申请日期 |
2002.02.15 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
MATSUHASHI HIDEAKI;KAJITA YOKO;KOGA YOSHIHIRO;NAKAMURA TOSHIYUKI;KANAMORI JUN |
分类号 |
H01L27/08;H01L21/336;H01L21/762;H01L21/8238;H01L21/84;H01L27/092;H01L27/12;H01L29/45;H01L29/786;(IPC1-7):H01L29/360;H01L29/380 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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