发明名称 Methods of forming thermal ink jet resistor structures for use in nucleating ink
摘要 Methods of forming thermal ink jet resistor structures for use in nucleating ink are described. In one embodiment, the method comprises forming a layer of conductive material over a substrate, and patterning and etching the layer of conductive material effective to form one or more arrays of resistors. Individual arrays comprise multiple, parallel-connected resistor elements and the resistor elements are configured such that failure of any one resistor element will not render its associated resistor array inoperative for nucleating ink. The resistor elements of individual arrays are formed such that collectively, the resistor elements are not independently addressable. Other embodiments are described.
申请公布号 US6832434(B2) 申请公布日期 2004.12.21
申请号 US20030336577 申请日期 2003.01.03
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 RAUSCH JOHN B.;SHADE DAVID A.
分类号 B41J2/14;(IPC1-7):H05B3/00 主分类号 B41J2/14
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