| 发明名称 |
Trench power semiconductor |
| 摘要 |
A trench power semiconductor component is described which has an edge cell in which an edge trench is provided. The edge trench, at least on an outer side wall, has a thicker insulating layer than an insulating layer of trenches of the cell array. This simple configuration provides a high dielectric strength and is economical to produce.
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| 申请公布号 |
US6833584(B2) |
申请公布日期 |
2004.12.21 |
| 申请号 |
US20020165912 |
申请日期 |
2002.06.10 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HENNINGER RALF;HIRLER FRANZ;KOTEK MANFRED;LARIK JOOST;ZUNDEL MARKUS |
| 分类号 |
H01L29/423;H01L29/739;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/423 |
| 代理机构 |
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