发明名称 |
High Q inductor formed in multi-level interconnect |
摘要 |
An inductor is formed from the interconnect structure of a semiconductor chip, using the vias and metal regions to form up and down segments of a loop, and horizontal metal lines to form the top and bottom segments of the loop. In addition, a second inductor can be formed between or under the first inductor to form an inductive system, such as a transformer.
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申请公布号 |
US6833781(B1) |
申请公布日期 |
2004.12.21 |
申请号 |
US20020184212 |
申请日期 |
2002.06.27 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
PADMANABHAN GOBI R.;YEGNASHANKARAN VISVAMOHAN |
分类号 |
H01F17/00;H01L23/522;(IPC1-7):H01F5/00 |
主分类号 |
H01F17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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