发明名称 High Q inductor formed in multi-level interconnect
摘要 An inductor is formed from the interconnect structure of a semiconductor chip, using the vias and metal regions to form up and down segments of a loop, and horizontal metal lines to form the top and bottom segments of the loop. In addition, a second inductor can be formed between or under the first inductor to form an inductive system, such as a transformer.
申请公布号 US6833781(B1) 申请公布日期 2004.12.21
申请号 US20020184212 申请日期 2002.06.27
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 PADMANABHAN GOBI R.;YEGNASHANKARAN VISVAMOHAN
分类号 H01F17/00;H01L23/522;(IPC1-7):H01F5/00 主分类号 H01F17/00
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