发明名称 Semiconductor memory device for reducing data accessing time
摘要 A semiconductor memory device minimizes a data accessing time. For the purpose, it includes a first control signal generator for producing a first control signal by logically combining a pipelatch-in signal and a start-odd start-even data output control signal, a second control signal generator for producing an odd control signal by logically combining an odd data enable signal for outputting odd-numbered data and a control signal for accessing the odd-numbered data in response to a start address, and generating an even control signal by logically combining an even data enable signal for outputting even-numbered data and a control signal for accessing the even-numbered data in response to the start address, a first accessing unit for accessing input data in response to the first control signal, a latch for temporarily storing data outputted from the first data accessing unit, and a second accessing unit for secondly accessing the data stored at the latch, thereby outputting secondly accessed data.
申请公布号 US6834015(B2) 申请公布日期 2004.12.21
申请号 US20030621246 申请日期 2003.07.15
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YOON YOUNG-JIN
分类号 G11C7/00;G11C7/10;(IPC1-7):G11C7/00 主分类号 G11C7/00
代理机构 代理人
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