| 摘要 |
PURPOSE: A method of improving qualities of a nitride layer and a method of manufacturing a semiconductor device are provided to reduce the content of chlorine in the nitride layer without increasing temperature during a nitride forming process by using a desired anneal gas capable of taking chlorine from the nitride layer. CONSTITUTION: A nitride layer(21) is formed on a substrate(10) by performing an LPCVD(Low Pressure Chemical Vapor Deposition) using a chlorine containing gas at a temperature of 600 °C or less. The resultant structure is annealed to remove chlorine from the nitride layer. At this time, an anneal gas containing at least one out of NH3, N2, H2, O2, and NO2 is used. A plurality of nitride layers(22-2n) are then formed on the resultant structure by performing repeatedly the mentioned steps.
|
