发明名称 RADIO FREQUENCY SWITCHING CIRCUIT APPLYING DIFFERENT VOLTAGES ACCORDING TO OPERATION STATE AND SEMICONDUCTOR DEVICE
摘要 PURPOSE: A radio frequency switching circuit and a semiconductor device are provided to improve waveform maintenance capability by applying a high voltage only during transmission, while applying a low voltage otherwise. CONSTITUTION: A radio frequency switching circuit includes a plurality of switching circuit portions arranged between a plurality of input and output terminals which input and output a high frequency signal. Each of the plurality of switching circuit portions is comprised of a circuit including a plurality of field effect transistors(101-116) connected in series. A gate control voltage is applied to gate terminals of the plurality of field effect transistors control on/off state of the switching portion. A drain control voltage is further applied to drain terminals or source terminals of the plurality of field effect transistors of each of the plurality of switching circuit portions. A voltage according to an electric power value of a high frequency signal supplied to the plurality of switching circuit portions is supplied as the gate control voltage and the drain control voltage.
申请公布号 KR20040107425(A) 申请公布日期 2004.12.20
申请号 KR20040043174 申请日期 2004.06.11
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 NAKATSUKA, TADAYOSHI;SUWA, ATSUSHI;TARA, KATSUSHI
分类号 H03K17/00;H03K17/0412;H03K17/06;H03K17/62;H03K17/693;(IPC1-7):H03K17/06 主分类号 H03K17/00
代理机构 代理人
主权项
地址