发明名称 |
RADIO FREQUENCY SWITCHING CIRCUIT APPLYING DIFFERENT VOLTAGES ACCORDING TO OPERATION STATE AND SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A radio frequency switching circuit and a semiconductor device are provided to improve waveform maintenance capability by applying a high voltage only during transmission, while applying a low voltage otherwise. CONSTITUTION: A radio frequency switching circuit includes a plurality of switching circuit portions arranged between a plurality of input and output terminals which input and output a high frequency signal. Each of the plurality of switching circuit portions is comprised of a circuit including a plurality of field effect transistors(101-116) connected in series. A gate control voltage is applied to gate terminals of the plurality of field effect transistors control on/off state of the switching portion. A drain control voltage is further applied to drain terminals or source terminals of the plurality of field effect transistors of each of the plurality of switching circuit portions. A voltage according to an electric power value of a high frequency signal supplied to the plurality of switching circuit portions is supplied as the gate control voltage and the drain control voltage.
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申请公布号 |
KR20040107425(A) |
申请公布日期 |
2004.12.20 |
申请号 |
KR20040043174 |
申请日期 |
2004.06.11 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAKATSUKA, TADAYOSHI;SUWA, ATSUSHI;TARA, KATSUSHI |
分类号 |
H03K17/00;H03K17/0412;H03K17/06;H03K17/62;H03K17/693;(IPC1-7):H03K17/06 |
主分类号 |
H03K17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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