TFT WITH REDUCED INTERFACIAL STATE DENSITY BETWEEN ACTIVE LAYER AND GATE INSULATING LAYER AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A TFT(Thin Film Transistor) and a manufacturing method thereof are provided to reduce interfacial state density between an active layer made of non-single crystal germanium and a gate insulating layer by using a zirconium oxide or a hafnium oxide as a material for the gate insulating layer. CONSTITUTION: An active layer(2) is formed on a substrate(1), wherein the active layer is made of a non-single crystal germanium layer. A gate oxide layer(3) is formed on the active layer. At this time, the gate oxide layer is substantially made of one selected from a group consisting of a zirconium oxide and hafnium oxide.