发明名称 THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, ESPECIALLY COMPENSATING DEVIATION OF A COUPLING CAPACITOR WITH A COMPENSATION CAPACITOR
摘要 PURPOSE: A thin film transistor substrate and a method for manufacturing the same are provided to make the sizes of capacitances same by compensating the deviation of the coupling capacitor generated due to the distance difference between the pixel electrode and the data line. CONSTITUTION: A thin film transistor substrate includes a compensation line(171), a protection layer and a light blinding pattern(115). The compensation line is divided from the data line(121). The protection layer is formed on the data line and the compensation line. The light blinding pattern is formed on the edge region of the pixel region. And, the light blinding pattern compensates the coupling capacitor placed adjacent the data line by forming the compensation line and the compensation electrode.
申请公布号 KR20040107033(A) 申请公布日期 2004.12.20
申请号 KR20030037815 申请日期 2003.06.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG, SEUNG JAE
分类号 G02F1/136;(IPC1-7):G02F1/136 主分类号 G02F1/136
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