发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, ESPECIALLY INCLUDING THE COMPENSATION ELECTRODE BRANCHED FROM THE DATA LINE |
摘要 |
PURPOSE: A thin film transistor substrate and a method for manufacturing the same are provided to compensate the deviation of the coupling capacitor generated due to the distance difference between the pixel electrode and the data line. CONSTITUTION: A thin film transistor substrate includes a compensation line(171), a protection layer and a pixel electrode(150). The compensation line is branched from the data line(121). The protection layer is formed on the data line and the compensation line. The pixel electrode is formed on one of the pixel regions defined by the gate line and the data line. And, the pixel electrode compensates the coupling capacitor placed adjacent the data line by forming the compensation line and the compensation electrode.
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申请公布号 |
KR20040107031(A) |
申请公布日期 |
2004.12.20 |
申请号 |
KR20030037813 |
申请日期 |
2003.06.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG, SEUNG JAE |
分类号 |
G02F1/136;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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