| 摘要 |
PURPOSE: A high frequency switching device and a semiconductor device are provided to control high powers while reducing power dissipations. CONSTITUTION: A high frequency switching device includes a plurality of high frequency signal input/output terminals(501-503) for inputting and outputting high frequency signals and a plurality of high frequency switch circuit portions(101-108) arranged between the plurality of high frequency signal input/output terminals. Each of the plurality of high frequency switch circuit portions includes a series connection circuit of a plurality of field-effect transistors. Either a high-level voltage or a low-level voltage is applied to the gate terminals of the plurality of field-effect transistors such than ON and OFF states are realized. First terminals of resistor elements are connected to an intermediate connection points of the plurality of field-effect transistors. A reverse voltage, having a phase opposite to that of the voltage applied to gate terminals of the plurality of field-effect transistors to which the first terminals of the resistor elements are connected, is applied to second terminals of the resistor elements.
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