| 摘要 |
PURPOSE: A method for crystallizing silicon is provided to obtain a high energy laser and a low energy laser at once by forming a plurality of narrow slits which reduce an energy density. CONSTITUTION: A substrate having an amorphous silicon film is provided. A mask(270) having a first energy region(273a) and a second energy region(E) is positioned on the substrate. A laser beam is illuminated on the mask. A predetermined region on the substrate is crystallized by the laser beam illuminated through the first energy region of the mask. A region, which is crystallized by the first energy region, is activated by the laser beam illuminated through the second energy region.
|
