METHOD OF FORMING LANDING PLUG POLY OF SEMICONDUCTOR DEVICE USING ETCH-BACK PROCESS ASSISTED WITH DECOUPLED PLASMA

摘要

PURPOSE: A method of forming a landing plug poly of a semiconductor device is provided to secure the uniformity of gate hard masks within the entire region of a wafer by performing an etch-back process assisted with a decoupled plasma on a polysilicon layer instead of a conventional CMP(Chemical Mechanical Polishing) process. CONSTITUTION: A plurality of gates are formed on a semiconductor substrate. Each gate includes a hard mask. An interlayer dielectric is formed thereon. A CMP(Chemical Mechanical Polishing) process is performed on the interlayer dielectric to expose the gate hard mask to the outside. A plurality of landing plug contact holes for exposing selectively the substrate to the outside are formed in the interlayer dielectric by using etching. A polysilicon layer for filling the holes is deposited thereon. The gate hard mask is exposed by performing an etch-back process on the polysilicon layer using a decoupled plasma. At this time, Cl2 and HBr base gases are used as an etching gas.