PHASE CHANGE MEMORY DEVICE HAVING SMALL SIZED CARBON NANOTUBES AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A phase change memory device and a manufacturing method thereof are provided to reduce a diameter of the carbon nanotube and to reduce a size of a program region. CONSTITUTION: A phase change memory device includes a lower conductive pattern(103a), a dielectric film(105), a carbon nanotube(109r), a phase change material film pattern(111a), and an upper conductive pattern(113a). The lower conductive pattern is arranged on a substrate(101). The dielectric film includes a connector(107) exposing at least a portion of the upper surface of the lower conductive pattern on the substrate. The carbon nanotube is formed on sidewalls of the dielectric film in the connector and is condensed to a height smaller than the upper surface of the dielectric film. The phase change material film pattern is arranged on the carbon nanotube and the dielectric upper surface. The upper conductive pattern is arranged on the phase change material film pattern.