发明名称 GAAS SCHOTTKY BARRIER FIELD EFFECT TRANSISTOR
摘要 PURPOSE:To prevent the deterioration in characteristics caused by wire bonding by a method wherein at least one of a gate bonding pads and drain bonding pads is constructed in thickness sufficiently thicker than that of the electrode pattern located on the circumference of one bonding pad. CONSTITUTION:A chip 2 and an input circuit substrate 3 are mounted on a package mounting part 1, and a bonding pad 11 is formed in the thickness markedly thicker than that of the bonding pad which was manufactured before so that the upper surface of the circuit electrode pattern 13 of the input circuit substrate 3 becomes the height same as the upper surface of the bonding pad 11 provided at the end part of a gate electrode lead-out part 4. As a result, a bonding wire 21 can be bonded horizontally.
申请公布号 JPH01161841(A) 申请公布日期 1989.06.26
申请号 JP19870320513 申请日期 1987.12.18
申请人 NEC CORP 发明人 OSE YASUSHI
分类号 H01L21/60 主分类号 H01L21/60
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