| 摘要 |
Magnetoresistive random access memory (MRAM) is used to provide in-pixel memory circuits for display devices. A memory circuit ( 25 ) comprises two MRAMs ( 60, 62 ), each coupled to a respective input of a flip-flop circuit ( 64 ). A display device ( 1 ) is provided comprising a plurality of pixels ( 20 ) each associated with a memory circuit ( 25 ). A bit line ( 45 ) passes over and contacts a first MRAM ( 60 ) in a first direction and a second MRAM ( 62 ) in a second direction, the first and second directions being substantially opposite to each other. This provides opposite resistance states in the two MRAMs ( 60, 62 ). The bit line ( 45 ) does not pass over a word line ( 43 ), thereby avoiding or reducing overlap capacitance losses. The word line ( 43 ) is formed during a same masking stage as a gate line ( 44 ). The bit line ( 45 ) is formed during a same masking stage as a column line ( 54 ).
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