| 摘要 |
PURPOSE:To enable sure connection between a high density lower interconnection and a high density upper interconnection utilizing through holes, by connecting the upper layer interconnection and the lower interconnection sandwiching a thick insulating layer and facing each other, by utilizing a thick (second) through hole corresponding with the length of a thick (second) insulating layer. CONSTITUTION:On a substrate 11 on which a lower interconnection 12 is formed, a first thin insulating layer 13 is formed, in which a first through hole 14 reaching the lower interconnection 12 is formed. A connector 15 is buried in the through hole 14, and a conductive pad pattern 15 is formed which is larger than the width of the lower interconnection 12 and the diameter of the through hole 14. On the first insulating layer 13 on which the pad pattern 15 is formed, a second insulating layer 16 thicker than the layer 13 is formed. In the insulating layer 16, a second through hole 17 reaching the pad pattern 15 is formed. This through hole 17 becomes a long through hole without increasing the aspect ratio. After a conductor 18 is buried in the second through hole 17, an upper layer interconnection 19 connecting to the conductor 18 is formed. |
