发明名称 |
SEMICONDUCTOR APPARATUS FOR STABILIZING RESISTANCE OF THIN-METAL-FILM RESISTOR ELEMENT BY CONNECTING DIRECTLY THIN-METAL-FILM RESISTOR ELEMENT TO WIRING PATTERN THROUGH CONNECTION HOLES OF INSULATING LAYER AND METHOD OF FABRICATING THE SAME |
摘要 |
PURPOSE: A semiconductor apparatus having a thin-metal-film resistor element and a method of fabricating the same are provided to obtain a stable voltage of a thin-metal-film resistor element by connecting directly the thin-metal-film resistor element to a wiring pattern. CONSTITUTION: A semiconductor apparatus includes a thin-metal-film resistor element(23) which is formed on an insulating layer. The insulating film is formed on a wiring pattern(11). The wiring pattern corresponds to both ends of the thin-metal-film resistor element. A plurality of connection holes(21) are formed on the insulating layer. The connection holes correspond to the both ends of the thin-metal-film resistor element and the wiring pattern. The thin-metal-film resistor element is formed from the insulating layer to inner walls of the connection holes and the wiring patterns. |
申请公布号 |
KR20040106248(A) |
申请公布日期 |
2004.12.17 |
申请号 |
KR20040042890 |
申请日期 |
2004.06.11 |
申请人 |
RICOH CO., LTD. |
发明人 |
HASHIMOTO, YASUNORI;YAMASHITA, KIMIHIKO |
分类号 |
H01L21/768;H01C7/00;H01C17/075;H01L21/3205;H01L21/822;H01L23/522;H01L27/04;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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