发明名称 SEMICONDUCTOR APPARATUS FOR STABILIZING RESISTANCE OF THIN-METAL-FILM RESISTOR ELEMENT BY CONNECTING DIRECTLY THIN-METAL-FILM RESISTOR ELEMENT TO WIRING PATTERN THROUGH CONNECTION HOLES OF INSULATING LAYER AND METHOD OF FABRICATING THE SAME
摘要 PURPOSE: A semiconductor apparatus having a thin-metal-film resistor element and a method of fabricating the same are provided to obtain a stable voltage of a thin-metal-film resistor element by connecting directly the thin-metal-film resistor element to a wiring pattern. CONSTITUTION: A semiconductor apparatus includes a thin-metal-film resistor element(23) which is formed on an insulating layer. The insulating film is formed on a wiring pattern(11). The wiring pattern corresponds to both ends of the thin-metal-film resistor element. A plurality of connection holes(21) are formed on the insulating layer. The connection holes correspond to the both ends of the thin-metal-film resistor element and the wiring pattern. The thin-metal-film resistor element is formed from the insulating layer to inner walls of the connection holes and the wiring patterns.
申请公布号 KR20040106248(A) 申请公布日期 2004.12.17
申请号 KR20040042890 申请日期 2004.06.11
申请人 RICOH CO., LTD. 发明人 HASHIMOTO, YASUNORI;YAMASHITA, KIMIHIKO
分类号 H01L21/768;H01C7/00;H01C17/075;H01L21/3205;H01L21/822;H01L23/522;H01L27/04;(IPC1-7):H01L21/320 主分类号 H01L21/768
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