发明名称 NON-EVAPORABLE GETTER MULTILAYER DEPOSITS COMPRISING LAYER WITH LOW ACTIVATION TEMPERATURE AND LAYER WITH LARGE SURFACE AREA OBTAINED BY CATHODIC DEPOSITION AND PROCESS FOR MANUFACTURING THE SAME
摘要 PURPOSE: To provide NEG(non-evaporable getter) materials which are obtained by cathodic deposition and characterized by low activation temperature and a large surface area, and to provide a process for their manufacturing. CONSTITUTION: In a multilayer deposit of non-evaporable getter having low activation temperature and a large surface area, the multilayer deposit comprises at least two layers formed on a support(10), the at least two layers comprise a first layer(11) of a non-evaporable getter material having a surface area equivalent to at least 20 times its geometrical area, and directly contacting an upper part of the support, and a second layer(12), having a thickness not greater than 1μm, of a non-evaporable getter alloy having a low activation temperature on an upper part of the first layer, wherein the foregoing arbitrary layers are obtained by cathodic deposition without material of the first layer not exposed to reactive gases generated between depositions of the first layer and the second layer.
申请公布号 KR20040106234(A) 申请公布日期 2004.12.17
申请号 KR20040042555 申请日期 2004.06.10
申请人 SAES GETTERS S.P.A. 发明人 CONTE, ANDREA;MORAJA, MARCO
分类号 C23C14/16;B01J20/02;B01J20/32;B32B15/02;C22C5/04;C22C27/00;C22C27/02;C23C14/14;C23C14/34;(IPC1-7):C23C14/16 主分类号 C23C14/16
代理机构 代理人
主权项
地址