METHOD FOR RESTRICTING GROWTH OF CHAIN DEFECTS IN POSTPROCESS FOR DEPOSITING SiON BY PREVENTING PROJECTION TYPE DEFECTS OF Al LATERAL LAYER OF METAL LINE ETCH PROCESS

摘要

PURPOSE: A method for removing defects in a metal line formation process is provided to prevent the generation of a bridge on an upper metal line by preventing growth of defects after SiON deposition process. CONSTITUTION: An Al layer(35) is formed on a semiconductor substrate(31). A photoresist layer pattern is formed thereon. An Al layer pattern is formed by selectively removing the Al layer. A passivation process for a lateral part of the Al layer pattern is performed by using vapor of H2O. The photoresist layer pattern is removed by performing an O2 plasma process. The O2 plasma process and a post-process are performed. A SiON layer(43) is formed on the entire structure including the Al layer pattern.