| 摘要 |
PURPOSE: A semiconductor memory device for minimizing the cell data sensing time is provided to prevent the speed delay and the current consumption by reducing the length of the routing of the input/output sense amplifier driving signal. CONSTITUTION: A semiconductor memory device for minimizing the cell data sensing time includes a plurality of memory cells(200), a plurality of column pass units(202), a data line division unit(208), a sense amplifier(204) and a write driver(206). The plurality of memory cells stores data inputted from the bit line driven by the word line enable signal and outputs the stored data to the bit lines, respectively. The plurality of column pass units transfers the data line to the cell bit line in response to the column enable signal. The data line division unit connects the read data line and the data line by the data write enable signal and divides the read data line and the write data line by the data write disable signal. The sense amplifier amplifies the data of the plurality of the memory cells in response to the sense amplifying enable signal during the read operation. And, the write driver drives the data to the write data line in response to the data write signal during the write operation.
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