发明名称 |
Light emitting element structure using nitride bulk single crystal layer |
摘要 |
The object of this invention is to provide a high-output type nitride light emitting device. The nitride light emitting device comprises an n-type nitride semiconductor layer or layers, a p-type nitride semiconductor layer or layers and an active layer therebetween, wherein a gallium-containing nitride substrate is obtained from a gallium-containing nitride bulk single crystal, provided with an epitaxial growth face with dislocation density of 10<5>/cm<2 >or less, and A-plane or M-plane which is parallel to C-axis of hexagonal structure for an epitaxial face, wherein the n-type semiconductor layer or layers are formed directly on the A-plane or M-plane. In case that the active layer comprises a nitride semiconductor containing In, an end face film of single crystal AlxGa1-xN (0<=x<=1) can be formed at a low temperature not causing damage to the active layer.
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申请公布号 |
US2004251471(A1) |
申请公布日期 |
2004.12.16 |
申请号 |
US20040493594 |
申请日期 |
2004.04.26 |
申请人 |
DWILINSKI ROBERT;DORADZINSKI ROMAN;GARCZYNSKI JERZY;SIERZPUTOWSKI LESZEK;KANBARA YASUO |
发明人 |
DWILINSKI ROBERT;DORADZINSKI ROMAN;GARCZYNSKI JERZY;SIERZPUTOWSKI LESZEK;KANBARA YASUO |
分类号 |
C30B7/00;C30B7/10;C30B9/00;C30B29/40;H01L21/318;H01S5/00;H01S5/02;H01S5/028;H01S5/16;H01S5/22;H01S5/32;H01S5/323;H01S5/343;(IPC1-7):H01L33/00 |
主分类号 |
C30B7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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