MEMORY DEVICE, MEMORY CONTROL METHOD, AND INFORMATION PROCESSING SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a nondestructive read-out memory device using ferroelectric capacitors, which prevents data from being deteriorated and destructed at the time of reading them, and can be improved in a read rate of data. SOLUTION: The memory device comprises: a memory cell for storing binary codes by making use of the polarized state of the ferroelectric capacitors; a read driving part for outputting electric signals from the memory cells according to the polarization state by applying a read voltage to the ferroelectric capacitors; a voltage holding part for holding the outputted electric signals; a judgement part for monitoring the electric signals being held and judging the binary codes stored in the memory cells; and a switching element inserted in the electric signal transmission paths between the output part of the memory cell and the voltage holding part. The switching element is made conductive at the time of outputting the electric signal from the memory cell, and are made nonconductive before the judgment part judges. COPYRIGHT: (C)2005,JPO&NCIPI