发明名称 Polishing composition
摘要 There is provided a polishing composition that reduces erosion and is used in a final polishing step of a semiconductor device manufacturing process. The polishing composition contains colloidal silica, a periodic acid compound, ammonia, ammonium nitrate and water and its pH is 1.8 to 4.0.
申请公布号 US2004250476(A1) 申请公布日期 2004.12.16
申请号 US20030674318 申请日期 2003.09.30
申请人 OHNO KOJI;HORIKAWA CHIYO;SAKAI KENJI;INA KATSUYOSHI 发明人 OHNO KOJI;HORIKAWA CHIYO;SAKAI KENJI;INA KATSUYOSHI
分类号 B24B37/00;C09C1/68;C09G1/02;C09K3/14;H01L21/304;H01L21/3105;H01L21/321;(IPC1-7):C09C1/68 主分类号 B24B37/00
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