发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE MANUFACTURED WITH THEM |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, to provide a semiconductor substrate whose manufacturing cost is reduced by abolishing alignment to a pn column without forming an additional layer, in manufacture of the semiconductor device of high breakdown voltage/low on-resistance having the pn column, and to provide a low-cost semiconductor device manufactured with them. SOLUTION: This method comprises: a forming step for forming the pn column which has a strip shape in a cross-sectional surface of a substrate, and further has a repeat pattern of p-conductive types and n-conductive types in a substrate surface, extending over the entire region 1pn in a semiconductor substrate 1 where a plurality of the same semiconductor substrates 100 are formed; a step for forming a residual component of a plurality of the same semiconductor devices 100 in the region 1pn in which the repeat pattern exists, with the pn column as a part of the component of the semiconductor device 100; and a step for cutting individual semiconductor device 100 into a chip from the region 1pn where a plurality of the same semiconductor devices 100 are formed. COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2004356577(A) |
申请公布日期 |
2004.12.16 |
申请号 |
JP20030155451 |
申请日期 |
2003.05.30 |
申请人 |
DENSO CORP;TOYOTA CENTRAL RES & DEV LAB INC |
发明人 |
SUZUKI MIKIMASA;HATSUTORI YOSHIKUNI;NAKAJIMA KYOKO |
分类号 |
H01L21/66;H01L21/336;H01L21/78;H01L29/06;H01L29/12;H01L29/739;H01L29/78;H01L29/861;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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