| 摘要 |
PROBLEM TO BE SOLVED: To provide excellent performance TFTs (thin-film transistors) which can solve the conventional problems especially relating to the manufacturing method of a crystal TFT, using excimer laser annealing and the related TFT. SOLUTION: A semiconductor island used as active region is formed, and insulating coating film used as gate insulated film is formed on it. Semiconductor film and the insulating coating film are treated by laser annealing, at the same time. As a result of this, the semiconductor island grows transversely in crystallization, in all directions, and the insulating coating film is turned quality high in simultaneously. Moreover, regarding the patterning of the semiconductor film, it can be patterned, without using resist in such a way that a light irradiating the semiconductor through a mask makes an extremely thin oxide film formed partially on the surface, and the semiconductor film, in which the ultra-thin oxide film is not formed on the surface, is removed by gas-phase etching executed, after the formation in a state with the semiconductor film being kept in an oxygen atmosphere. A high performance single crystal TFT, superior in transistor characteristics and of proper yield, can be manufactured, in such a manner that these processes are executed continuously, without exposing to conditions which not exposed by atmosphere. COPYRIGHT: (C)2005,JPO&NCIPI
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