SEMICONDUCTOR DEVICE HAVING LOW RESISTANCE AND FABRICATING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which can be fabricated so that it has a relatively low resistance, and a fabricating method for the semiconductor device. SOLUTION: An interface reaction preventing layer is formed between a polycrystalline silicon layer and a metal layer. The interface reaction preventing layer has various functions such as a function of preventing the generation of a substance having a high resistance, which is found in conventional semiconductor device fabricating methods. COPYRIGHT: (C)2005,JPO&NCIPI