| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor element capable of preventing an unnecessary etching groove at the upper end of a trench from being formed, hereby preventing any inconvenience from occurring in other processes, in a semiconductor element using an STI technique. SOLUTION: The manufacturing method of the semiconductor element includes a process of sequentially forming a protective oxide film 102, a nitride film 103, and an insulating film 104 for protecting the nitride film 103 on a substrate 101, a process of forming a trench 105, a process of extending an opening end in the direction of an active region by etching the insulating film 104, a process of forming a thermal oxide film 106 on the trench 105, a process of sliding a level difference between the thermal oxide film and the nitride film from the upper end of the trench in the direction of the active region by etching the nitride film 103 taking the insulating film 104 as a mask, a process of forming a filling oxide film 107, a process of exposing the nitride film 103, a process of etching the filling oxide film 107, and a process of removing the nitride film 103 and the protective film 102. COPYRIGHT: (C)2005,JPO&NCIPI
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