| 摘要 |
Disclosed is an oxide high temperature superconductor having a crystalline substrate of low dielectric constant formed thereon with a thin film of the oxide high temperature superconductor that is high in crystallographic integrity and excels in crystallographic orientation as well as a method of making such an oxide high temperature superconductor. In fabricating an oxide high temperature superconductor containing Ba as a constituent element and having such a substrate formed thereon with a thin film of the oxide high temperature superconductor, a first buffer layer composed of CeO3 is formed on a sapphire R (1, -1, 0, 2) face substrate for reducing lattice mismatch between the sapphire R (1, -1, 0, 2) face substrate and the oxide high temperature superconductor thin film, and a second buffer layer composed of such an oxide high temperature superconductor but in which Ba is substituted with Sr is formed on the first buffer layer made of CeO3 to allow the oxide high temperature superconductor thin film to be formed on the second buffer layer. Thus, if the first buffer layer for reducing the lattice mismatch between the sapphire R (1, -1, 0, 2) face substrate and the oxide high temperature superconductor thin film is liable to an interfacial reaction with Ba from the oxide high temperature superconductor thin film, the second buffer layer prevents the interfacial reaction, thereby permitting the epitaxial growth of an oxide high temperature superconductor thin film that excels on both crystallographic integrity and crystallographic orientation.
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