发明名称 |
Semiconductor device including an isolation trench having a dopant barrier layer formed on a sidewall thereof and a method of manufacture therefor |
摘要 |
The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the-same. In one advantageous embodiment the semiconductor device includes a doped layer located over a semiconductor substrate and an isolation trench located in the doped layer. The isolation trench may further include a bottom surface and a sidewall. Additionally, the semiconductor device may include a dopant barrier layer located on the sidewall and a doped region located in the bottom surface.
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申请公布号 |
US2004251511(A1) |
申请公布日期 |
2004.12.16 |
申请号 |
US20040884726 |
申请日期 |
2004.07.02 |
申请人 |
AGERE SYSTEMS INC. |
发明人 |
DESKO JOHN C.;KRUTSICK THOMAS J.;HSIEH CHUNG-MING;THOMPSON BRIAN E.;JONES BAILEY;WALLACE STEVE |
分类号 |
H01L21/762;H01L21/763;H01L21/8249;(IPC1-7):H01L21/331;H01L21/76;H01L29/00 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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