| 摘要 |
In order to produce aspherical lenses on a semiconductor material, it is proposed to transfer the structure of a photoresist spherical cap to the underlying semiconductor substrate with the aid of a reactive ion etching method. In this case, use is made of a gas component which etches the photoresist and a further gas component which etches the underlying semiconductor substrate. The ratio of the gas flows is varied during the etching operation. The result is an aspherical lens whose measured cross-sectional profile (12) has only small errors (14) from an ideal curve (13).
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