发明名称 |
Semiconductor device and manufacturing method the same |
摘要 |
A semiconductor device includes a lower layer formed on a substrate and a first insulating layer formed to cover the lower layer. A first concave section is formed to extend from a surface of the first insulating layer to the lower layer. A first taper section is formed along a corner portion between a bottom of the first concave section and an inner wall of the first concave section, and has a taper surface which extends toward a center of the bottom. A first conductor section is formed of material containing copper to fill the first concave section in which the first taper section is formed.
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申请公布号 |
US2004251552(A1) |
申请公布日期 |
2004.12.16 |
申请号 |
US20040835459 |
申请日期 |
2004.04.30 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
TAKEWAKI TOSHIYUKI;KUNISHIMA HIROYUKI;ODA NORIAKI |
分类号 |
H01L21/768;H01L21/28;H01L21/3205;H01L23/52;H01L23/522;H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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