发明名称 Semiconductor device and manufacturing method the same
摘要 A semiconductor device includes a lower layer formed on a substrate and a first insulating layer formed to cover the lower layer. A first concave section is formed to extend from a surface of the first insulating layer to the lower layer. A first taper section is formed along a corner portion between a bottom of the first concave section and an inner wall of the first concave section, and has a taper surface which extends toward a center of the bottom. A first conductor section is formed of material containing copper to fill the first concave section in which the first taper section is formed.
申请公布号 US2004251552(A1) 申请公布日期 2004.12.16
申请号 US20040835459 申请日期 2004.04.30
申请人 NEC ELECTRONICS CORPORATION 发明人 TAKEWAKI TOSHIYUKI;KUNISHIMA HIROYUKI;ODA NORIAKI
分类号 H01L21/768;H01L21/28;H01L21/3205;H01L23/52;H01L23/522;H01L23/532;(IPC1-7):H01L23/48 主分类号 H01L21/768
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