发明名称 |
Production of an electrical contact in an integrated circuit comprises applying and structuring a hard mask layer on an insulating layer to form regions for contact hole openings in the insulating layer, and further processing |
摘要 |
<p>Production of an electrical contact in an integrated circuit comprises applying and structuring a hard mask layer (8) on an insulating layer (6,7) to form regions for contact hole openings in the insulating layer to contact the components formed in a silicon wafer (1) for subsequent anisotropic etching, and completely removing the hard mask layer from the insulating layer after inserting a filler layer (10) in the contact hole openings.</p> |
申请公布号 |
DE10326319(B3) |
申请公布日期 |
2004.12.16 |
申请号 |
DE2003126319 |
申请日期 |
2003.06.11 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
PATZER, JOACHIM;KROENKE, MATTHIAS |
分类号 |
H01L21/283;H01L21/311;H01L21/60;H01L21/768;H01L21/8242;(IPC1-7):H01L21/283;H01L21/824 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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