发明名称 Production of an electrical contact in an integrated circuit comprises applying and structuring a hard mask layer on an insulating layer to form regions for contact hole openings in the insulating layer, and further processing
摘要 <p>Production of an electrical contact in an integrated circuit comprises applying and structuring a hard mask layer (8) on an insulating layer (6,7) to form regions for contact hole openings in the insulating layer to contact the components formed in a silicon wafer (1) for subsequent anisotropic etching, and completely removing the hard mask layer from the insulating layer after inserting a filler layer (10) in the contact hole openings.</p>
申请公布号 DE10326319(B3) 申请公布日期 2004.12.16
申请号 DE2003126319 申请日期 2003.06.11
申请人 INFINEON TECHNOLOGIES AG 发明人 PATZER, JOACHIM;KROENKE, MATTHIAS
分类号 H01L21/283;H01L21/311;H01L21/60;H01L21/768;H01L21/8242;(IPC1-7):H01L21/283;H01L21/824 主分类号 H01L21/283
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