| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To secure an air gap (isolation) structure indispensable for obtaining a high Q value of a thin film bulk acoustic resonator element. <P>SOLUTION: The thin film bulk acoustic resonator element is configured such that a membrane layer is formed on a substrate, a first electrode, a piezoelectric layer, and a second electrode are sequentially formed on the membrane layer, and an air-gap is formed under the first electrode. An electrode forming part made of the same material as that of the first electrode is deposited on the membrane layer around the air-gap to form the air-gap. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
