| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor temperature sensor that is increased in the fluctuating width of its output voltage to temperature than the conventional p-n junction diode, has a simple constitution, and is improved in sensitivity. SOLUTION: This semiconductor temperature sensor uses a functional diode 2 as a temperature sensor element. This sensor is constituted by connecting in series a low-concentration resistor 3 having such negative temperature characteristics that the resistance value of the resistor 3 increases when the temperature drops to the diode 2 formed of polysilicon so that the variation of the resistance value of the low-concentration resistor 3 may be added to the variation of a p-n junction voltage. COPYRIGHT: (C)2005,JPO&NCIPI |
