| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor which ensures a shorter recovery time in the inverse direction. SOLUTION: The rectifying region 13 of a first conductivity type is surrounded with an inverse rejection groove 26, the inverse rejection region 33b of a second conductivity type is arranged within the inverse rejection groove 26, an ohmic junction is formed with a source diffusing region 19, and a common electrode film 42 to form a Schottky junction with the rectifying region 13 is then formed. When the Schottky junction is inversely biased, a pn junction formed between the inverse rejection region 33b and rectifying region 13 is also inversely biased, and the rectifying region 13 is filled with a depletion layer spreading from the pn junction. In this case, the pn junction diode and the Schottoky junction diode are connected in series from the viewpoint of the equivalent circuit, and the breakdown voltage is determined with a value of the junction diode. COPYRIGHT: (C)2005,JPO&NCIPI |
