NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element of which the yield can be improved by uniforming characteristics in the surface of a wafer. SOLUTION: The nitride semiconductor light emitting element is provided with a substrate 10 and a nitride semiconductor layer 13 laminated on the substrate 10. The substrate 10 or the nitride semiconductor layer 13 has a defect concentrated area 11 and a low defect area 12 which is an area except the defect concentrated area 11 and a trenched part 14 trenched deeper than the low defect area 12 is formed on a part including the defect concentrated area 11 of the nitride semiconductor layer 13 or the substrate 10. COPYRIGHT: (C)2005,JPO&NCIPI