SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device suitable for achieving high-density integration of a semiconductor integrated circuit. SOLUTION: The semiconductor comprises a plurality of memory cells interconnected in series each having a floating gate and a control gate; two selection transistors connected across the plurality of memory cells; a bit line that contacts the impurity region of one of the two selection transistors; and a ground line that contacts the impurity region of the other of the two selection transistors. The above configuration allows reduction of the contacts with both of the bit line and ground line per memory cell, thereby enabling high-density integration. COPYRIGHT: (C)2005,JPO&NCIPI