| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that, when the size of a unit cell is reduced, the sensitivity of a solid-state image pickup element falls, because the quantity of incident light which can be entrapped into a light receiving section decreases. SOLUTION: In order to secure the charge handling quantity required by a vertical transfer 15, a twin p-type well structure, in which a second p-type well region 21 is formed below a first p-type well region 20 through an n<SP>-</SP>-type impurity region 22, is constituted in an IT type (or FIT transfer type) CCD solid-state imaging device having a vertical overflowing drain structure constituted by forming the first p-type well region 20 closely to an n-type transfer channel 19. At the same time, a channel stopping section 25 used for separating pixels is electrically coupled with the second p-type well region 21 by deeply forming the section 25 to the position of the region 21. COPYRIGHT: (C)2005,JPO&NCIPI
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