发明名称 |
Semiconductor laser device and method of fabricating the same |
摘要 |
A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.
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申请公布号 |
US2004252739(A1) |
申请公布日期 |
2004.12.16 |
申请号 |
US20040811137 |
申请日期 |
2004.03.29 |
申请人 |
TAKEUCHI KUNIO;HIROYAMA RYOJI;INOUE DAIJIRO;OKAMOTO SHIGEYUKI;MATSUOKA NORIAKI;KAMEYAMA SHINGO;OOTA KIYOSHI |
发明人 |
TAKEUCHI KUNIO;HIROYAMA RYOJI;INOUE DAIJIRO;OKAMOTO SHIGEYUKI;MATSUOKA NORIAKI;KAMEYAMA SHINGO;OOTA KIYOSHI |
分类号 |
H01S5/00;H01S5/22;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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