发明名称 Semiconductor laser device and method of fabricating the same
摘要 A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.
申请公布号 US2004252739(A1) 申请公布日期 2004.12.16
申请号 US20040811137 申请日期 2004.03.29
申请人 TAKEUCHI KUNIO;HIROYAMA RYOJI;INOUE DAIJIRO;OKAMOTO SHIGEYUKI;MATSUOKA NORIAKI;KAMEYAMA SHINGO;OOTA KIYOSHI 发明人 TAKEUCHI KUNIO;HIROYAMA RYOJI;INOUE DAIJIRO;OKAMOTO SHIGEYUKI;MATSUOKA NORIAKI;KAMEYAMA SHINGO;OOTA KIYOSHI
分类号 H01S5/00;H01S5/22;(IPC1-7):H01S5/00 主分类号 H01S5/00
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