发明名称 |
Method of a non-metal barrier copper damascene integration |
摘要 |
The present disclosure provides a method, integrated circuit, and interconnect structure utilizing non-metal barrier copper damascene integration. The method is provided for fabricating an interconnect for connecting to one or more front end of line (FEOL) devices. The method includes forming a layer of doped oxide on the one or more FEOL devices and forming a first barrier layer on the layer of doped oxide, the first barrier layer comprising such material as silicon oxycarbide (SiOC) or silicon carbonitride (SiCN). The method further includes forming a plurality of refractory metal plugs in the first barrier layer and the doped oxide layer, forming a low dielectric constant film over the first barrier layer and the plurality of refractory metal plugs, and performing a first etch to create trenches through the low dielectric constant film. The plurality of refractory metal plugs and the first barrier layer perform as an etch-stop.
|
申请公布号 |
US2004251547(A1) |
申请公布日期 |
2004.12.16 |
申请号 |
US20030459222 |
申请日期 |
2003.06.11 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD. |
发明人 |
WU ZHEN-CHENG;LU YUNG-CHEN;JANG SYUN-MING |
分类号 |
H01L21/31;H01L21/3205;H01L21/76;H01L21/768;H01L23/48;H01L23/52;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/31 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|