| 摘要 |
<p>A solid state imaging device (1) comprising MxN pixels Pm,n, KxN voltage holding sections Hk,n and N signal processing sections Sn. The MxN pixels Pm,n are arranged two-dimensionally in M rows and N columns where each pixel Pm,n is located at m-th row and n-th column. Each voltage holding section Hk,n can receive and hold a voltage outpout from any one pixel selected from M pixels P1,n-PM,n in the n-th column out of the MxN pixels Pm,n and can outputs the voltage thus holding. Each signal processing section Sn receives voltages from two voltage holding sections H1,n and H2,n, performs a specified signal processing based on these voltages and outputs a voltage representative of the processing results.</p> |
