发明名称 METHOD FOR IMPROVING SURFACE ROUGHNESS OF PROCESSED FILM OF SUBSTRATE AND APPARATUS FOR PROCESSING SUBSTRATE
摘要 <p>Disclosed is a method for improving surface roughness of a resist film formed on a wafer. In a coating/developing system, a wafer (W) is regulated to a certain temperature, which wafer with a resist film formed on the surface has been exposed and developed. A solvent vapor is supplied to the surface of the resist film of the wafer (W) which is controlled to the certain temperature for dissolving the resist film surface. The wafer (W) is then heated for volatilizing the solvent in the resist film and densifying the resist film. Consequently, roughness in the surface of the resist film is smoothed, thereby improving surface roughness of the resist film.</p>
申请公布号 WO2004109779(A1) 申请公布日期 2004.12.16
申请号 WO2004JP07486 申请日期 2004.05.31
申请人 INATOMI, YUICHIRO;TOKYO ELECTRON LIMITED 发明人 INATOMI, YUICHIRO
分类号 G03F7/40;H01L21/00;H01L21/027;(IPC1-7):H01L21/027;H01L21/306;H01L21/304 主分类号 G03F7/40
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