发明名称 TRANSPARENT GAS-BARRIER LAMINATED FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a transparent gas-barrier laminated film for electronics elements which is improved in gas-barrier properties without deteriorating the transparency of a plastic film and is excellent in post processing aptitude. <P>SOLUTION: In the transparent gas-barrier film, a silicon oxide layer of a high degree of oxidation the value of x of SiOx of which is at least 1.8 is formed at least on one side of a substrate of a plastic film by a dry coating method, and a silicon oxide layer of a low degree of oxidation the value of x of SiOx of which is 1.0-1.6 is formed on the silicon oxide layer of the high degree of oxidation. After plasma treatment by a gas comprising at least one of oxygen, nitrogen, argon, or helium is applied to the surface of the silicon oxide layer of the low degree of oxidation, a polymer layer is laminated on the plasma-treated surface of the silicon oxide of the low degree of oxidation. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004351832(A) 申请公布日期 2004.12.16
申请号 JP20030154177 申请日期 2003.05.30
申请人 TOPPAN PRINTING CO LTD 发明人 KOMORI TSUNENORI;SASAKI NOBORU
分类号 G02F1/1333;B32B9/00;C23C16/42;H01L51/50;H01L51/52;H05B33/04;H05B33/14 主分类号 G02F1/1333
代理机构 代理人
主权项
地址