SEMICONDUCTOR ELEMENT HAVING SCHOTTKY BARRIER AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To realize a Schottky barrier diode in which the chip size is comparatively small, current capacity is large and forward voltage is low. SOLUTION: An anode electrode 12 is formed on the exposed part of an N type semiconductor area 14 to one main surface SA of a semiconductor base 11 and a cathode electrode 13 is formed on the exposed part of an N+semiconductor area 16 to one main surface SA of the semiconductor base 11. The N+semiconductor area 16 is circularly formed so as to surround the N type semiconductor area 14 and the cathode electrode 13 has a connecting electrode part 13a having relatively wide width and a peripheral electrode part 13b having relatively narrow width. When it is defined that the width of a contact surface between the N+semiconductor area 16 and the connecting electrode part 13a is Lc and the width of a contact surface between the anode electrode 12 and the N type semiconductor area 14 is La, respective areas are formed so as to satisfy (0.5Lc+300)μm≤Laμm≤(Lc+350)μm. Consequently the diode having a Schottky barrier by which the current capacity is increased without increasing the chip size and forward voltage is reduced can be obtained. COPYRIGHT: (C)2005,JPO&NCIPI