| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device which can improve the throughput and prevent release of reaction gas to the outside of furnace. SOLUTION: The method of manufacturing semiconductor device comprises the steps of carrying a substrate 4 into a reaction tube 1, processing the substrate 4 by supplying a reaction gas including at least hydrogen atoms into the reaction tube 1 from the reaction gas tubes 9a, 9b, and removing remaining gas for removing the remaining gas in the reaction tube 1 after the processing of substrate. The process for removing the remaining gas includes a purge process for purging the reaction tube 1 by supplying the purge gas from the purge gas introducing tube 9c to the reaction tube 1. In this purge process, a flow rate of the purge gas is set to the 20 times the flow rate for supplying the reaction gas used for the processing of the substrate. COPYRIGHT: (C)2005,JPO&NCIPI
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