发明名称 |
Organic semiconductor element and fabrication method thereof |
摘要 |
The present invention provides an organic semiconductor element in which the insulation strength of the insulation layer and the carrier mobility of the organic semiconductor are both high. The semiconductor layer is an organic semiconductor element consisting of an organic compound. A gate oxide film consisting of an oxide of the gate electrode material is provided between the gate electrode and the gate insulation layer. The gate insulation layer consists of an organic compound.
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申请公布号 |
US2004251474(A1) |
申请公布日期 |
2004.12.16 |
申请号 |
US20040765220 |
申请日期 |
2004.01.28 |
申请人 |
PIONEER CORPORATION |
发明人 |
UCHIDA YOSHIHIKO;NAKAMURA KENJI |
分类号 |
H01L51/05;H01L21/316;H01L21/336;H01L29/786;H01L51/00;H01L51/30;H01L51/40;(IPC1-7):H01L27/10 |
主分类号 |
H01L51/05 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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