Semiconductor wafer and method of manufacturing thereof

摘要

A semiconductor wafer includes an oxide film above a silicon layer, and a porous silicon layer which is located above the oxide film and serves as a gettering layer. Gettering of impurities from a silicon layer is not interrupted by the oxide film since the porous silicon layer is placed above the oxide film. The semiconductor wafer having the structure above can be produced by a bonding method. Bonding strength relative to the oxide film is ensured by placing a growth silicon layer between the oxide film and the porous silicon layer, compared with the case in which the oxide film and the porous silicon layer are directly bonded.