| 摘要 |
PURPOSE:To allow the application of a photolithographic method even to a mask with which the uniform film thickness is not obtainable by forming a mask material in such a manner as to have the distribution of the light transmittance associated to the shape of the desired film thickness with respect to light for exposing when irradiated with this light. CONSTITUTION:The mask 1 has a mask substrate 2 and the mask material 3 which is formed on the surface of this substrate 2 and consists of chromium, etc. This mask material 3 has the sectional shape associated to the desired film thickness shape, for example, the sectional shape of equally spaced blaze type gratings. The exposure distribution of the UV rays to a photoresist has, therefore, the distribution coinciding with the sectional shape of the blaze type gratings if the photoresist is applied on the surface of the substrate and is irradiated with the UV rays after the mask 1 is placed on the photoresist. The object having the desired film thickness shape, for example, the object such as blaze type gratings can, therefore, be produced by the photolithography. The shortened time for production, the improved mass productivity and the reduced cost are attained. |
