| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME |
| 摘要 |
<p>A gate insulating film is formed using a plasma on a three-dimensional silicon substrate surface having a plurality of crystal planes. The plasma gate insulating film experiences no increase in interface state in any crystal planes and has a uniform thickness even at corner portions of the three-dimensional structure. By forming a high-quality gate insulating film using a plasma, there can be obtained a semiconductor device having good characteristics.</p> |
| 申请公布号 |
WO2004109790(A1) |
申请公布日期 |
2004.12.16 |
| 申请号 |
WO2004JP07844 |
申请日期 |
2004.05.31 |
| 申请人 |
OHMI, TADAHIRO;TERAMOTO, AKINOBU |
发明人 |
OHMI, TADAHIRO;TERAMOTO, AKINOBU |
| 分类号 |
H01L21/28;H01L21/336;H01L21/8238;(IPC1-7):H01L21/336;H01L29/78;H01L27/092;H01L21/823 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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